Parasitic losses reduced with lightly doped epitaxial layers of proper thickness. Report presents calculations of conversion losses in Schottky-barrier diodes. Theoretical work directed toward reduction of parasitic losses through proper design of space-charge layers; possible, to reduce barrier capacitances and contributions to barrier resistances from undepleted epitaxial layers.


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    Titel :

    Conversion Losses In GaAs Schottky-Barrier Diodes


    Beteiligte:
    Von Roos, Oldwig (Autor:in) / Wang, Ke-Li (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.12.1988



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch




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