Photodetectors are important components in automotive industry. Sensitivity, speed, responsivity, quantum efficiency, photocurrent gain and power dissipation are the important characteristics of a photodetector. We report a high performance photodetector based on GaAs Metal- Semiconductor Field Effect Transistor (MESFET), with very high responsivity, excellent quantum efficiency, high sensitivity, moderate speed, tremendous gain and low power dissipation, surpassing their photodiode, phototransistor and other counterparts. A theoretical model of GaAs front illuminated Optical Field Effect transistor is presented. The photovoltaic and photoconductive effects have been taken into account. The gate of the OPFET device has been left open to make a reduction in the number of power supplies. The results are in line with the experiments. The device shows high potential in automotive applications.


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    Titel :

    GaAs Optical Field Effect Transistor (OPFET): A High Performance Photodetector for Automotive Applications


    Weitere Titelangaben:

    Sae International Journal of Passenger Cars- Electronic and Electrical Systems
    Sae Int. J. Passeng. Cars – Electron. Electr. Syst


    Beteiligte:
    Gaitonde, Jaya (Autor:in) / Lohani, R B (Autor:in)

    Kongress:

    SAE 2016 World Congress and Exhibition ; 2016



    Erscheinungsdatum :

    05.04.2016


    Format / Umfang :

    8 pages




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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