It is confirmed that the efficient light emits at the Si bandgap energy in the MOS tunneling diode structure. But its external quantum efficiency only about /spl sim/10/sup -5/. We make the surface roughness in the anisotropic dissolution of Si(100) in aqueous KOH. Such surface roughness enhance phonon-assisted radiative recombination. By KOH etching, the external quantum efficiency arrived at /spl sim/10/sup -4/.


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    Title :

    Enhancing light-emission efficiency from Si-MOS tunneling diodes by KOH wet etching


    Contributors:


    Publication date :

    2003-01-01


    Size :

    92348 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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