It is confirmed that the efficient light emits at the Si bandgap energy in the MOS tunneling diode structure. But its external quantum efficiency only about /spl sim/10/sup -5/. We make the surface roughness in the anisotropic dissolution of Si(100) in aqueous KOH. Such surface roughness enhance phonon-assisted radiative recombination. By KOH etching, the external quantum efficiency arrived at /spl sim/10/sup -4/.
Enhancing light-emission efficiency from Si-MOS tunneling diodes by KOH wet etching
2003-01-01
92348 byte
Conference paper
Electronic Resource
English
Enhancing light-emission efficiency from Si-MOS tunneling diodes by KOH wet etching
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