Monolithic arrays of active-pixel junction field-effect (JFET) devices made from InGaAs proposed for use as imaging sensors sensitive to light in visible and short-wavelength infrared parts of electromagnetic spectrum. Each pixel of such array comprises photodetector monolithically integrated with JFET output-amplifier circuit of source-follower type - structure similar to charge-coupled device (CCD). Sizes of instruments reduced because large cooling systems not needed.


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    Title :

    Monolithic Active-Pixel Infrared Sensors



    Published in:

    Publication date :

    1995-06-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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