Access

    Access via TIB

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Low Threshold 1.3um-GaInAsP/InP Tensile-Strained Quantum Well Lasers with Buried Heterostructure



    Conference:

    8th Annual meeting, LEOS '95 ; 1995 ; San Francisco; CA


    Published in:

    LEOS '95 ; 284-285


    Publication date :

    1995-01-01


    Size :

    2 pages


    Remarks:

    IEEE Cat no 95CH35739



    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




    Wide Temperature Range Linear DFB Lasers at 1.3um With Very Low Threshold

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996


    Low Threshold InGaAs-AlGaAs-GaAs Strained-Layer Quantum Well Heterostructure Square Ring Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1993


    Tensile-Strained AlGaAs/GaAsP Single Quantum-Well Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994


    High Reliability, High Performance 1300nm, 1480nm GaInAsP/InP GRIN-SCH Strained-Layer Quantum Well Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994


    Temperature characteristics of GaAsP/AlGaAs tensile strained quantum well lasers

    Tolliver, T.R. / Anderson, N.G. / Agahi, F. et al. | IEEE | 1996