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    Title :

    Effect of p-dopant positioning in low-threshold, InGaAs/GaAs/AlGaAs, MQW GRINSCH lasers with GaAs etch-stop layer for multiwavelength applications [2683-03]



    Conference:

    Conference, Fabrication, testing, and reliability of semiconductor lasers ; 1996 ; San Jose; CA



    Publication date :

    1996-01-01


    Size :

    10 pages


    Remarks:

    Held as part of the SPIE OE/LASE '96 Symposium




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




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