Effect of p-dopant positioning in low-threshold, InGaAs/GaAs/AlGaAs, MQW GRINSCH lasers with GaAs etch-stop layer for multiwavelength applications [2683-03]
Conference, Fabrication, testing, and reliability of semiconductor lasers ; 1996 ; San Jose; CA
1996-01-01
10 pages
Held as part of the SPIE OE/LASE '96 Symposium
Conference paper
English
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