780nm-emitting Al-free Active Region Diode Lasers with Compressively-Strained InGaAsP Quantum Wells
Annual meeting; 10th, IEEE: Lasers and Electro-Optics Society ; 1997 ; San Francisco; CA
1997-01-01
2 pages
Described as proceedings. IEEE cat no: 97CH36057
Conference paper
English
electro-optics , LEOS , IEEE , lasers
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