Access

    Access via TIB

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    InGaAs Quantum Well Diode Lasers with Regrown Al Containing Layers for Application to Current Confinement Structures



    Conference:

    Annual meeting; 10th, IEEE: Lasers and Electro-Optics Society ; 1997 ; San Francisco; CA



    Publication date :

    1997-01-01


    Size :

    2 pages


    Remarks:

    Described as proceedings. IEEE cat no: 97CH36057




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




    InAsN/InGaAs/InP quantum well structures for midinfrared diode lasers

    Lin, H.H. / Shih, D.K. / Lin, Y.H. et al. | IEEE | 2003


    InAsN/InGaAs/InP Quantum Well Structures for Mid-Infrared Diode Lasers

    IEEE | British Library Conference Proceedings | 2003


    Linewidth-enhancement factors of InGaAs and InGaAsN single-quantum-well diode lasers

    Shterengas, L. / Jeng-Ya Yeh, / Mawst, L.J. et al. | IEEE | 2004


    MOVPE Grown Lasers Having InGaAs/InP Superlattice Confinement and Barrier Layers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1993


    1.48-m InGaAs/InGaAsP separated confinement strained layer multiple quantum well lasers [2886-559]

    An, H. / Yang, S. / Sun, H. et al. | British Library Conference Proceedings | 1996