Access

    Access via TIB

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    High-growth-rate epitaxy of InN film by a novel-design MOCVD [4078-70]



    Conference:

    Conference; 2nd, Optoelectronic materials and devices ; 2000 ; Taipei



    Publication date :

    2000-01-01


    Size :

    7 pages




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




    Nr. 4078

    DataCite | 1923


    Optical and transport properties of MOCVD-grown InSb thin films [4078-101]

    Yang, T. R. / Kuri, G. / Kim, M. R. et al. | British Library Conference Proceedings | 2000


    Novel electrically tunable FBG laser [4078-82]

    Ding, L. / Xu, Y. / Feng, D. et al. | British Library Conference Proceedings | 2000


    New concept technology: pressure-variation liquid phase epitaxy [4078-28]

    Mao, X. / Chan, Y.-C. / Lam, Y.-L. et al. | British Library Conference Proceedings | 2000


    Sensing characteristics of ISFET based on AIN thin film [4078-104]

    Chiang, J.-L. / Jan, S.-S. / Chen, Y.-C. et al. | British Library Conference Proceedings | 2000