Hysteresis effect of pH-ISFET based on Beckman Phi 110 (Si~3N~4 gate pH-ISFET) [4078-132]
Conference; 2nd, Optoelectronic materials and devices ; 2000 ; Taipei
2000-01-01
8 pages
Conference paper
English
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Temperature dependence of the hysteresis for the a-Si:H gate pH-ISFET [4078-134]
British Library Conference Proceedings | 2000
|Sensing characteristics of ISFET based on AIN thin film [4078-104]
British Library Conference Proceedings | 2000
|Sensitivity and hysteresis behavior of the commercial Sentron 1090 Al~2O~3 gate pH-ISFET [4078-133]
British Library Conference Proceedings | 2000
|ISFET-based system for glucose determination [4425-31]
British Library Conference Proceedings | 2001
|