ThP3 The Properties of Ion-Implanted InGaAs Single Quantum-Well Semiconductor Saturable Absorber Mirrors for Passive Mode-Locking
Annual meeting; 14th, IEEE; Lasers and Electro-Optics Society ; 2001 ; San Diego, CA
2001-01-01
2 pages
IEEE cat no 01CH37242
Conference paper
English
LEOS , lasers , IEEE , electro-optics
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