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    Title :

    ThP3 The Properties of Ion-Implanted InGaAs Single Quantum-Well Semiconductor Saturable Absorber Mirrors for Passive Mode-Locking


    Contributors:

    Conference:

    Annual meeting; 14th, IEEE; Lasers and Electro-Optics Society ; 2001 ; San Diego, CA



    Publication date :

    2001-01-01


    Size :

    2 pages


    Remarks:

    IEEE cat no 01CH37242




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English






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