Access

    Access via TIB

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Electrical and optical properties of indium antimonide doped by cadmium and tellurium [5065-20]



    Conference:

    International conference; 6th, Material science and material properties for infrared optoelectronics ; 2002 ; Kiev, Ukraine



    Publication date :

    2003-01-01


    Size :

    7 pages




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




    Model of Tellurium- and Zinc-Doped Indium Antimonide Solidification in Space

    Alexei Churilov / Aleksandar Ostrogorsky | AIAA | 2005


    Nr. 5065

    DataCite | 1942


    Electrical properties of HgMnTe Schottky diodes [5065-18]

    Kosyachenko, L. A. / Ostapov, S. E. / Markov, A. V. et al. | British Library Conference Proceedings | 2003


    Chemical dissolution of gallium antimonide in HNO~3-HCl-CH~3COOH solutions [5065-31]

    Chernyuk, O. S. / Tomashik, V. N. / Grytsiv, V. I. et al. | British Library Conference Proceedings | 2003


    Quartz as artificial pyroactive material [5065-12]

    Kosorotov, V. F. / Blonsky, I. V. / Shchedrina, L. V. et al. | British Library Conference Proceedings | 2003