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    Title :

    An InGaP/InGaAs/GaAs Double Channel Pseudomorphic High Electron Mobility Transistor (DC-PHEMT)


    Contributors:

    Conference:

    Conference, Optoelectronic and microelectronic materials and devices; COMMAD 2002 ; 2002 ; Sydney, Australia



    Publication date :

    2002-01-01


    Size :

    4 pages


    Remarks:

    IEEE cat no 02EX601




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English





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