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    Title :

    Gain Switching of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon


    Contributors:
    Hantschmann, C. (author) / Vasil'ev, P. P. (author) / Siming, C. (author) / Mengya, L. (author) / Seeds, A. J. (author) / Huiyun, L. (author) / Penty, R. V. (author) / White, I. H. (author)

    Published in:

    JOURNAL OF LIGHTWAVE TECHNOLOGY ; 36 , 18 ; 3837-3842


    Publication date :

    2018-01-01


    Size :

    6 pages



    Type of media :

    Article (Journal)


    Type of material :

    Print


    Language :

    English


    Classification :

    DDC:    621.3692



    Overcoming Gain Saturation in InAs/GaAs Quantum Dot Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996


    Overcoming gain saturation in InAs/GaAs quantum dot lasers

    Schmidt, O.G. / Kirstaedter, N. / Mao, M.-H. et al. | IEEE | 1996




    InAs Quantum Dot Lasers on GaAs Substrate with 12 Layers

    Shimizu, H. / Saravanan, S. | IEEE | 2005