The size reduction of transistors has been the main reason for a successful development of semiconductor integrated circuits over the last decades. Because of the physically limited downscaling of transistors, alternative technologies namely the information processing and nonvolatile resistive switches (also termed memristors) have come into focus. Memristors reveal a fast switching speed, long retention time, and stable endurance. Nonvolatile analog bipolar resistive switching with a considerable large On/Off ratio is reported in BiFeO3 (BFO)-based resistive switches. So far resistive switches are mainly applied in memory applications or logic operations. Given the excellent properties of BFO based memristors, the further exploration of functionalities for memristive devices is required. A new approach for hardware based cryptographic system was developed within the framework of this dissertation. By studying the power conversion efficiencies on BFO memristor at various harmonics, it has been shown that two sets of clearly distinguishable power ratios are achievable when the BFO memristor is set into high or into low resistance state. Thus, a BFO-based binary encoding system can be established. As an example the unrecoverable seizure information from encoded medical data suggests the proper functioning of the proposed encryption system. Aside from cryptographic functionality, the single pairing spike timing dependent plasticity (STDP) in BFO-based artificial synapses is demonstrated, which can be considered as the cornerstone for energy-efficient and fast hardware-based neuromorphic networks. In comparison to the biological driven realistic way, only single one pairing of pre- and postsynaptic spikes is applied to the BFO-based artificial synapse instead of 60-80 pairings. Thus, the learning time constant of STDP function can be reduced from 25 ms to 125 us. ; In den letzten Jahrzehnten war die Größenreduktion von Transistoren einer der Hauptgründe für die Leistungssteigerung von integrierten ...
Beyond "More than Moore": Novel applications of BiFeO3 (BFO)-based nonvolatile resistive switches
2016-05-27
Theses
Electronic Resource
English
info:eu-repo/classification/ddc/629 , ddc:629 , Autokorrelationsfunktion , Energieverbrauch , BFO-basierten Memristoren , Widerstandsschalter , normalisierte Memristance , Schaltdynamik , Oberschwingungsgeneration , Leistungsübertragungskoeffizient , BFO-basiertes Kryptosystem , Aktionspotentials-Intervall abhängige Plastizität , Lernfenster , Speicherkonsolidierung , Synaptisch Energieverbrauch , BFO memristor , resistive switching , normalized memristance , switching dynamics , higher harmonic generation , power conversion efficiency , BFO-based encryption system , autocorrelationfunction , spike-timing dependent plasticity , learning window , memory consolidation , synaptic power consumption
Beyond "More than Moore": Novel applications of BiFeO3 (BFO)-based nonvolatile resistive switches
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