The invention relates to an IGBT and FRD power semiconductor module, a motor controller and an automobile. The IGBT and FRD power semiconductor module comprises a substrate, a plurality of power electrode terminals, a plurality of signal terminals, an upper bridge chipset, a lower bridge chipset, a signal connecting piece, an interconnection heightening layer and an interconnection substrate. The substrate is provided with a signal copper layer area, a chipset area and a substrate power copper layer area. The plurality of power electrode terminals comprise a direct-current negative power electrode terminal, a direct-current positive power electrode terminal and an output power electrode terminal; each signal terminal is connected with the driving areas on the IGBT power chips in the upper bridge chip set and the lower bridge chip set through the corresponding signal connecting pieces to form a driving path; the direct-current positive power electrode terminal is connected with the direct-current negative power electrode terminal through the power copper layer, the chipset, the interconnection heightening layer and the interconnection substrate on the substrate to form a power path. According to the invention, the problems of large electromagnetic interference and inconsistent dynamic and static current sharing are solved.

    本发明涉及一种IGBT和FRD功率半导体模块、电机控制器及汽车,包括基板、多个功率电极端子、多个信号端子、上桥芯片组、下桥芯片组、信号连接件、互联垫高层和互联基板;基板上设有信号铜层区域、芯片组区域、基板功率铜层区域;多个功率电极端子包括直流负极功率电极端子、直流正极功率电极端子及输出功率电极端子;各信号端子分别通过对应的信号连接件与上桥芯片组和下桥芯片组中的IGBT功率芯片上的驱动区域进行连接,以形成驱动路径;直流正极功率电极端子分别通过基板上的功率铜层、芯片组、互联垫高层及互联基板与直流负极功率电极端子相连接,以形成功率路径。本发明解决了电磁干扰大和动静态均流不一致的问题。


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    Title :

    IGBT and FRD power semiconductor module, motor controller and automobile


    Additional title:

    IGBT和FRD功率半导体模块、电机控制器及汽车


    Contributors:
    WU XIAOCHUAN (author) / ZENG SHAOBO (author) / MA MINHUI (author) / WU XIANGSHUI (author) / YANG YAO (author) / SHI RUI (author)

    Publication date :

    2025-05-09


    Type of media :

    Patent


    Type of material :

    Electronic Resource


    Language :

    Chinese


    Classification :

    IPC:    H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES / H02M APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS , Anlagen zur Umformung von Wechselstrom in Wechselstrom, von Wechselstrom in Gleichstrom oder umgekehrt, oder von Gleichstrom in Gleichstrom und zur Verwendung in Netzen oder ähnlichen Stromversorgungssystemen / B60L PROPULSION OF ELECTRICALLY-PROPELLED VEHICLES , Antrieb von elektrisch angetriebenen Fahrzeugen / H10D



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