A semiconductor device according to an embodiment includes a silicon carbide layer, a gate electrode, and a silicon oxide layer disposed between the silicon carbide layer and the gate electrode, a number of single bonds between carbon atoms being larger than that of double bonds between carbon atoms in the silicon oxide layer.


    Access

    Download


    Export, share and cite



    Title :

    SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVING DEVICE, VEHICLE, AND ELEVATOR


    Contributors:

    Publication date :

    2017-11-30


    Type of media :

    Patent


    Type of material :

    Electronic Resource


    Language :

    English


    Classification :

    IPC:    B60R Fahrzeuge, Fahrzeugausstattung oder Fahrzeugteile, soweit nicht anderweitig vorgesehen , VEHICLES, VEHICLE FITTINGS, OR VEHICLE PARTS, NOT OTHERWISE PROVIDED FOR / H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES / B66B Aufzüge , ELEVATORS / H02M APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS , Anlagen zur Umformung von Wechselstrom in Wechselstrom, von Wechselstrom in Gleichstrom oder umgekehrt, oder von Gleichstrom in Gleichstrom und zur Verwendung in Netzen oder ähnlichen Stromversorgungssystemen / H02P CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS , Steuern oder Regeln von elektrischen Motoren, elektrischen Generatoren, dynamoelektrischen Umformern