Imaging of defect density distributions in GaN was carried out. We measured transient absorption of the deep impurity levels by a 400 nm probe pulse followed by three-photon carrier pumping with an 800 nm pump pulse.
Imaging of Defect Density Distribution in GaN using Femtosecond Pump-Probe Measurement
2005-01-01
160182 byte
Conference paper
Electronic Resource
English
Femtosecond pump-probe reveals exciton formation
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