Imaging of defect density distributions in GaN was carried out. We measured transient absorption of the deep impurity levels by a 400 nm probe pulse followed by three-photon carrier pumping with an 800 nm pump pulse.


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    Title :

    Imaging of Defect Density Distribution in GaN using Femtosecond Pump-Probe Measurement


    Contributors:
    Horiuchi, K. (author) / Kamata, S. (author) / Kannari, F. (author)


    Publication date :

    2005-01-01


    Size :

    160182 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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