The development of high quality GaAs-based tunnel junctions grown by MBE was systematically studied. Fabricated Si/Be-doped GaAs tunnel junctions show record low junction resistance. The enhancement of lateral current spreading is demonstrated.


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    Title :

    GaAs-based tunnel junctions for micro-cavity devices


    Contributors:
    Moller, C. (author) / Bottcher, J. (author) / Protsch, M. (author) / Kunzel, H. (author)


    Publication date :

    2002-01-01


    Size :

    157352 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English