In this paper we will describe pulsed laser deposition of Nd:KGW films on Si substrate by introducing (100 or 111) CeO/sub 2/ buffer layer. The KrF excimer laser (/spl lambda/=248 nm, /spl tau/=27 ns, v=20 Hz) is used for ablation. The Rutherford backscattering (RBS), X-ray diffraction (XRD) analyses, PL measurements, and waveguide propagation have been performed. The annealing at 900/spl deg/C of the films has also been accomplished.


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    Title :

    Fabrication of Nd:KGd(WO/sub 4/)/sub 2/ thin film on Si substrate by introducing CeO/sub 2/ buffer layer


    Contributors:
    Okato, T. (author) / Atanasov, P.A. (author) / Tomov, R.I. (author) / Obara, M. (author)


    Publication date :

    2003-01-01


    Size :

    54802 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




    Efficient diode-pumped Nd:KGd(WO~4)~2 laser grown by top nucleated floating crystal method [5131-23]

    Boulon, G. / Metrat, G. / Muhlstein, N. et al. | British Library Conference Proceedings | 2003