For extremely high bit rate data transmission, laser sources with dynamically stable linearly polarized single-mode light output are desirable. We have fabricated oxidized VCSELs with elliptical current aperture for stable linearly polarized single-mode light emission and investigated their RF-behavior. The InGaAs-QW VCSEL structure is grown on <100> GaAs substrate. S-parameter and spectral relative intensity noise measurement give consistent results and yield both a K-factor of 0.468 ns equivalent to 19 GHz intrinsic modulation bandwidth.


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    Title :

    High frequency behavior of oxidized single-mode single polarization VCSELs with elliptical current aperture


    Contributors:
    Fiedler, U. (author) / Wiedenmann, D. (author) / Weigl, B. (author) / Jung, C. (author) / Reiner, G. (author) / Buck, M. (author) / Ebeling, K.J. (author)


    Publication date :

    1996-01-01


    Size :

    173204 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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