The III-V semiconductor system AlGaInP is today the only material suitable for the fabrication of high-brightness LEDs in the yellow to red color range. In this paper, we will compare a number of new approaches for high-brightness LEDs, including the thin-film technology. The discussion will include the potential of various approaches as well as their benefits and drawbacks.


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    Title :

    Novel technologies for high-brightness AlGaInP LEDs


    Contributors:


    Publication date :

    2003-01-01


    Size :

    69263 byte



    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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