We demonstrate a GaAs based OPO. The singly resonant, pulsed OPO utilized an all-epitaxially-grown orientation-patterned GaAs (OP-GaAs) crystal. By tuning either near-IR pump wavelength or OP-GaAs temperature, we achieved broad tunability between 2 and 10 microns.


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    Title :

    Optical parametric oscillation in quasi-phase-matched GaAs


    Contributors:
    Vodopyanov, K.L. (author) / Levi, O. (author) / Kuo, P.S. (author) / Pinguet, T.J. (author) / Harris, J.S. (author) / Fejer, M.M. (author) / Gerard, B. (author) / Becouarn, L. (author) / Lallier, E. (author)


    Publication date :

    2004-01-01


    Size :

    232903 byte



    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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