The temperature behavior of 1.5 /spl mu/m GaInNAsSb edge-emitting lasers is analyzed through variation of cavity length and temperature. Monomolecular recombination and intervalence band absorption dominate the threshold current, and carrier leakage becomes important at elevated temperatures.


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    Title :

    The temperature sensitivity of GaAs-based 1.5 /spl mu/m GaInNAsSb lasers


    Contributors:
    Bank, S.R. (author) / Goddard, L.L. (author) / Wistey, M.A. (author) / Yuen, H.B. (author) / Harris, J.S. (author)


    Publication date :

    2004-01-01


    Size :

    135778 byte



    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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