This paper demonstrates increased light emission in Si p-i-n light emitting diodes (LEDs) by changing the geometry of the device. The theory behind this, the device fabrication, electrical and optical characteristics are also presented. Reducing the injector size, decreases the diffusion current as shown by IV measurements and simulations. As a result, for a particular on- current the pn-product and hence light increases inside the active region for the new devices. The electroluminescence (EL) intensity measurements show an enhanced light emission by more than a factor of four.
Increased light emission by geometrical changes in Si LEDs
2011-09-01
940301 byte
Conference paper
Electronic Resource
English
Impact of VLC on Light Emission Quality of White LEDs
British Library Online Contents | 2016
|British Library Online Contents | 2004
|White-Light Leds Pitted LEDs: emit broad spectra
British Library Online Contents | 2009
Microdisk LEDs light semiconductor display
British Library Online Contents | 2001
Terex Sees The Light With LEDs
Online Contents | 2011