This paper demonstrates increased light emission in Si p-i-n light emitting diodes (LEDs) by changing the geometry of the device. The theory behind this, the device fabrication, electrical and optical characteristics are also presented. Reducing the injector size, decreases the diffusion current as shown by IV measurements and simulations. As a result, for a particular on- current the pn-product and hence light increases inside the active region for the new devices. The electroluminescence (EL) intensity measurements show an enhanced light emission by more than a factor of four.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Increased light emission by geometrical changes in Si LEDs


    Contributors:
    Puliyankot, V. (author) / Piccolo, G. (author) / Hueting, R. J. E. (author) / Heringa, A. (author) / Kovalgin, A. (author) / Schmitz, J. (author)


    Publication date :

    2011-09-01


    Size :

    940301 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Impact of VLC on Light Emission Quality of White LEDs

    Popoola, W. O. | British Library Online Contents | 2016


    White-Light LEDS

    Narukawa, Y. | British Library Online Contents | 2004


    White-Light Leds Pitted LEDs: emit broad spectra

    British Library Online Contents | 2009


    Microdisk LEDs light semiconductor display

    British Library Online Contents | 2001


    Terex Sees The Light With LEDs

    Online Contents | 2011