Summary form only given. We present analysis of the lasing characteristics of GaN hexagons fabricated by selective area growth hydride vapor phase epitaxy (SAG-HVPE). SAG-HVPE GaN hexagons are commercially important because of the low manufacturing cost and because they provide laser quality facets without etching or cleaving. We demonstrate optically pumped lasing and observe longitudinal cavity modes.


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    Title :

    Lasing in free standing GaN hexagons


    Contributors:
    Herzog, W.D. (author) / Goldberg, B.B. (author) / Unlu, M.S. (author) / Singh, R. (author) / Dabkowski, F.P. (author)


    Publication date :

    1999-01-01


    Size :

    301165 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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