Summary form only given. We present analysis of the lasing characteristics of GaN hexagons fabricated by selective area growth hydride vapor phase epitaxy (SAG-HVPE). SAG-HVPE GaN hexagons are commercially important because of the low manufacturing cost and because they provide laser quality facets without etching or cleaving. We demonstrate optically pumped lasing and observe longitudinal cavity modes.
Lasing in free standing GaN hexagons
1999-01-01
301165 byte
Conference paper
Electronic Resource
English
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