Using a novel MOVPE fabrication technique and a weakly guiding waveguide structure high brightness InGaAs-GaAs-AlGaAs laser diodes with a narrow beam waist were produced. These devices were pulse tested and gave a peak output power of 0.58 Watts at 3 Amps with a beam waist of only 11 /spl mu/m.


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    Title :

    High brightness curved-facet laser diodes operating at 980 nm


    Contributors:
    Braddell, J. (author) / O'Brien, P. (author) / McInerney, J. (author)


    Publication date :

    1996-01-01


    Size :

    176793 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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