Waveguide nin-modulators and switches using strained InGaAs/GaAs MQW active layers are investigated with emphasis on high-speed modulation and efficient switching properties at wavelengths of about 0.98 /spl mu/m. Based upon an nin-cross-section and a coplanar Schottky diode design we realized high-speed absorption modulators and digital optical switches utilizing both absorption edge shift and field-induced waveguiding due to the quantum-confined Stark effect in the depletion region.


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    Title :

    High-speed nin-waveguide modulator and switch


    Contributors:
    Jager, D. (author) / Stohr, A. (author) / Humbach, O. (author)

    Published in:

    Proceedings of LEOS'94 ; 1 ; 236-237 vol.1


    Publication date :

    1994-01-01


    Size :

    126849 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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