In this investigation, we explore the deposition of nonplanar dielectric layers using laser micromachined shadow masks. Depositing dielectrics on semiconductors is advantageous for a variety of reasons. By finishing VCSELs or RC-LEDs with dielectric layers, expense and time can be avoided. The shadow masks were produced by laser micromachining on alumina and stainless steel. The top holes ranged from 10 /spl mu/m to 150 /spl mu/m in diameter. Deposition of SiO/sub 2/, Si/sub 3/N/sub 4/ or multilayer combinations of these materials was performed using plasma-enhanced chemical vapor deposition (PECVD) and sputtering through the shadow masks. The results from our study examine how the deposition method, deposited material and physical geometrical parameters of the shadow masks and their relative compositions influence the deposition rates and deposition patterns.
Techniques for shadow mask deposition of nonplanar dielectric layers
2003-01-01
146227 byte
Conference paper
Electronic Resource
English
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