We report a novel evanescent-coupled germanium electro-absorption modulator with a small active area of 16 μm2 giving an extinction ratio of ~10 dB for a wavelength range of 1580 - 1610 nm. In addition, monolithic integration of both evanescent-coupled Ge electro-absorption modulator and Ge p-i-n photodetector is demonstrated. This high speed low power electro-absorption modulator is extremely useful in developing CMOS-compatible integrated silicon photonics circuits for short reach optical communication links.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Germanium electro-absorption modulator for power efficient optical links


    Contributors:
    Lim, Andy Eu-Jin (author) / Tsung-Yang Liow, (author) / Ning Duan, (author) / Liang Ding, (author) / Mingbin Yu, (author) / Lo, G. Q. (author) / Kwong, D. L. (author)


    Publication date :

    2011-10-01


    Size :

    781386 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




    ITO-assisted fiber-optic polarization-insensitive electro-absorption optical modulator

    Shah, Manoj Kumar / Lu, Rongguo / Zhang, Xiaoxia et al. | British Library Online Contents | 2017


    Linearized electro-optical intensity modulator

    Xiaobo Xie, / Khurgin, J. / Jin Kang, et al. | IEEE | 2003


    VCSEL modulation using an integrated electro-absorption modulator

    Serkland, D.K. / Peake, G.M. / Geib, K.M. | IEEE | 2004


    Germanium improves modulator efficiency

    British Library Online Contents | 1997