Summary form only given. Ultrafast all-optical switches will be of great importance to our future's high-bit-rate optical communication systems. We have previously reported a surface-reflection type ultrafast all-optical switch with a response time of 250 fs. The device is basically a saturable absorber that relies on a carrier-induced change in the excitonic absorption of InGaAs/InAlAs MQWs. To achieve ultrafast operation MQWs were grown at a low-temperature of 200/spl deg/C and were doped with Be. Furthermore, large optical nonlinearity was achieved by introducing compressive strain into the MQWs, adopting reflection geometry and using a DBR with 1% reflectivity. We describe here successfully enhanced on/off ratios of the device by using spin polarization.


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    Title :

    Ultrafast, high-contrast, polarization-insensitive all-optical switch by using spin-polarization in low-temperature-grown MQWs


    Contributors:
    Takahashi, R. (author) / Itoh, H. (author) / Iwamura, H. (author)


    Publication date :

    1999-01-01


    Size :

    287163 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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