This study presents aluminum-free diode lasers that demonstrate high power conversion efficiency at 970 nm. Al-free active diode lasers, i.e. InGaAs(P)/InGaP/GaAs have superior power-conversion efficiency compared to conventional Al-containing devices due to their low differential series resistance and higher thermal conductivity.
High power conversion efficiency 970 nm aluminum-free diode lasers
2004-01-01
140911 byte
Conference paper
Electronic Resource
English
High Power Conversion Efficiency 970nm Aluminum-Free Diode Lasers
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