Temperature dependence of the gain characteristics in a 1.31-/spl mu/m GaInAsP/InP quantum-well laser was measured and compared with that in a 0.98 /spl mu/m GaInAs/GaAs laser. It was found that the low characteristic temperature T/sub 0/ in the 1.31-/spl mu/m laser was determined by the temperature dependence of the transparent current density J/sub tr/.
Experimental analysis of characteristic temperature in quantum-well semiconductor lasers
1996-01-01
193684 byte
Conference paper
Electronic Resource
English
Experimental Analysis of Characteristics Temperature in Quantum-well Semiconductor Lasers
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