Temperature dependence of the gain characteristics in a 1.31-/spl mu/m GaInAsP/InP quantum-well laser was measured and compared with that in a 0.98 /spl mu/m GaInAs/GaAs laser. It was found that the low characteristic temperature T/sub 0/ in the 1.31-/spl mu/m laser was determined by the temperature dependence of the transparent current density J/sub tr/.


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    Title :

    Experimental analysis of characteristic temperature in quantum-well semiconductor lasers


    Contributors:
    Higashi, T. (author) / Yamamoto, T. (author) / Kubota, S. (author) / Ogita, S. (author)


    Publication date :

    1996-01-01


    Size :

    193684 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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