Summary form only given. Shallow ion implantation was used to study the effect of cap layer and implant temperature in the InP/InGaAs quantum well system. The greatest shifts occur at a dose of 1/spl times/10/sup 14/ cm/sup -2/, at 200 /spl deg/C for the InP capped sample and at room temperature for the InGaAs capped sample.


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    Title :

    Influence of cap layer on interdiffusion in InP/InGaAs quantum wells


    Contributors:
    Carmody, C. (author) / Tan, H.H. (author) / Jagadish, C. (author)


    Publication date :

    2002-01-01


    Size :

    128270 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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