In this paper, transition between accumulation, depletion and inversion condition of transistor with 65nm channel length as a charge controlled device is studied. As a charge controlled device, doping and acceptor concentration in the deice affect to C(V) characteristic, consequently, to transient behavior. Considerably, investigation of off-current, Short Channel Effect(SCE)s are studied. For simplicity and accuracy, quasi-static model is used to model charge distribution in junction areas within the device.
Analysis of Donor and Acceptor Concentration Effect on 65nm NMOS Device
2019-05-01
295449 byte
Conference paper
Electronic Resource
English
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