We have developed APDs designed for 10 Gb/s and 40 Gb/s receivers. A multimode waveguide structure and a very thin InAlAs multiplication layer enable high quantum efficiency, a high bandwidth, and low-voltage operation. Therefore, the waveguide structure is suitable for 10 Gb/s or higher bit rate APD receivers. In this paper, an InAlAs multiplication layer thickness is optimised so as to achieve low dark current and high GB product for 10-40 Gb/s high-sensitivity receivers.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    High-speed and high-sensitivity waveguide InAlAs avalanche photodiodes for 10-40 Gb/s receivers


    Contributors:
    Nakata, T. (author) / Takeuchi, T. (author) / Makita, K. (author) / Torikai, T. (author)


    Publication date :

    2001-01-01


    Size :

    171809 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




    Digital Alloy InAlAs Avalanche Photodiodes

    Jiyuan, Z. / Yuan, Y. / Yaohua, T. et al. | British Library Online Contents | 2018



    Detection Efficiencies for InP, InAlAs, and InAlAs-InP Single-Photon Avalanche Photodiodes

    IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005


    Design and Performance of InAlGaAs/InAlAs Superlattice Avalanche Photodiodes

    Watanabe, I. / Tsuji, M. / Hayashi, M. et al. | British Library Online Contents | 1997