There has been considerable interest in the optical and electrical properties of InGaAs/GaAs strained quantum wells (SQW) grown on (111) oriented substrates because of the presence of a built-in electric field originating in the piezoelectric effect. If an external electric field opposite to the built-in electric field is applied, a blueshift of the optical transition energies can be observed. In this paper we report the observation of this blueshift by photoluminescence spectroscopy in In/sub 0.2/Ga/sub 0.8/As/GaAs SQWs grown on (111)A GaAs.


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    Title :

    Piezoelectric effect in InGaAs/GaAs quantum wells grown on (111)A GaAs observed by photoluminescence spectroscopy


    Contributors:
    Vaccaro, P. (author) / Tominaga, K. (author) / Hosoda, M. (author) / Fujita, K. (author) / Watanabe, T. (author)

    Published in:

    Proceedings of LEOS'94 ; 2 ; 351-352 vol.2


    Publication date :

    1994-01-01


    Size :

    153669 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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