We present a simple and robust ring cavity design that relies on a single monolithically integrated semiconductor optical amplifier and 10 GB/s electroabsorption modulator (EAM) to provide both the gain and modelocking mechanisms for the laser. Small perturbations to the large reverse bias voltage applied to the EAM allow for about 2 ppm tunability of the rep rate of the cavity. About 10 dB of isolation is provided by the directional difference in net saturated gain of the device.
Direct generation of 1.5 /spl mu/m, 2.1 ps pulses at 10 GHz from an actively modelocked fiber laser using a monolithic semiconductor optical amplifier and electroabsorption modulator device
2001-01-01
158009 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 2001
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