We present a simple and robust ring cavity design that relies on a single monolithically integrated semiconductor optical amplifier and 10 GB/s electroabsorption modulator (EAM) to provide both the gain and modelocking mechanisms for the laser. Small perturbations to the large reverse bias voltage applied to the EAM allow for about 2 ppm tunability of the rep rate of the cavity. About 10 dB of isolation is provided by the directional difference in net saturated gain of the device.


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    Title :

    Direct generation of 1.5 /spl mu/m, 2.1 ps pulses at 10 GHz from an actively modelocked fiber laser using a monolithic semiconductor optical amplifier and electroabsorption modulator device


    Contributors:
    Roth, J.M. (author) / Dreyer, K. (author) / Collings, B. (author) / Knox, W. (author) / Bergman, K. (author)


    Publication date :

    2001-01-01


    Size :

    158009 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English