In this work, Graphene-Nano Ribbon Field Effect Transistor devices (GNRFET) were simulated using Advance Device Systems (ADS) for the design of high-speed low power ADC converters. The design of the various components comprising ADCs was for low power and high-speed features, including comparators, and encoders. The features of the ADCs were compared with the state-of-the-art FinFET technology as potential devices applied to high-speed communication, computer architecture, and high-speed digital signal processors. GNRFET analog and digital systems showed superiority over other silicon technology in their low power consumption and high switching speed. The results show that these nanoscale devices have potential future for high-speed communication system, and dynamic Nano electromechanical (NEMS) SOC based systems. GNRFET devices with 10nm minimum channel length were used in the study. GNRFET ADC systems have less than 24.5 $\mu\text{Watt}$ power consumption as compared to 46.2 $\mu\text{Watt}$ in 45nm scale FinFET technology. As small as 40 nsec rise time was observed from the switching speed of the ADCs when compared to 50 nsec for a 45nm scale FinFET ADC.
Low Power High Speed ADCs using GNRFET Device Technology
2021-08-16
1419209 byte
Conference paper
Electronic Resource
English
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