InP/InGaAs/InP heterostructures were selectively grown in an array of 60 nm holes on a 90 nm pitch by MOCVD. The pattern was defined photolithographically directly in hydrogen silsesquioxane, a spin-on-glass, obviating the need for pattern transfer processes.
Nanoscale selective area epitaxy: towards lithographically defined quantum dots at 1.5 /spl mu/m using direct lithographic patterning
2005-01-01
394956 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 2005
|UV Lithographic Patterning on Spin-coated DNA Thin-films
IEEE | 2008
|Lithographically Fabricated Planar Holographic Bragg Reflectors
British Library Online Contents | 2004
|Fluidic zoom lens is fabricated lithographically
British Library Online Contents | 2005