InP/InGaAs/InP heterostructures were selectively grown in an array of 60 nm holes on a 90 nm pitch by MOCVD. The pattern was defined photolithographically directly in hydrogen silsesquioxane, a spin-on-glass, obviating the need for pattern transfer processes.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Nanoscale selective area epitaxy: towards lithographically defined quantum dots at 1.5 /spl mu/m using direct lithographic patterning


    Contributors:


    Publication date :

    2005-01-01


    Size :

    394956 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Nanoscale Selective Area Epitaxy: Towards Lithographically Defined Quantum Dots at 1.5 mum using Direct Lithographic Patterning

    IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005



    UV Lithographic Patterning on Spin-coated DNA Thin-films

    Diggs, Darnell E. / Grote, James G. / Bartsch, Carrie et al. | IEEE | 2008


    Lithographically Fabricated Planar Holographic Bragg Reflectors

    Greiner, C. / Iazikov, D. / Mossberg, T. W. | British Library Online Contents | 2004


    Fluidic zoom lens is fabricated lithographically

    British Library Online Contents | 2005