This paper reports the development of the separate confinement broad waveguide AlGaAs/GaAs heterostructures grown by low pressure metal organic chemical vapor deposition (LP MOCVD) for high power laser diodes operated at 808 nm.


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    Title :

    808 nm high power laser diodes based on MOCVD grown AlGaAs/GaAs broad waveguide heterostructures


    Contributors:


    Publication date :

    2003-01-01


    Size :

    52098 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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