Summary form only given. In our work with thin upper cladding layer InGaAs single quantum well (SQW) lasers, we have found that shifts of greater than 50 nm can be achieved by simply changing the type of metal used on the p-GaAs heavily doped contact layer adjacent to the thin p-clad layer. In this report, we describe how changes in optical mode loss are responsible for the large wavelength shifts observed.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Large wavelength shifts in thin p-clad InGaAs QW lasers


    Contributors:
    Wu, C.H. (author) / Zory, P.S. (author) / Emanuel, M.A. (author)

    Published in:

    Proceedings of LEOS'94 ; 1 ; 117-118 vol.1


    Publication date :

    1994-01-01


    Size :

    159677 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Large Wavelength Shifts in Thin P-clad InGaAs QW Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994


    Microsecond lasing delays in thin p-clad InGaAs QW lasers

    Wu, C.H. / Miester, C.F. / Zory, P.S. et al. | IEEE | 1996


    Microsecond Lasing Delays in Thin P-Clad InGaAs QW Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996


    Long-wavelength operation of double-clad Tm:silica-fiber lasers [6453-74]

    Sacks, Z. S. / Schiffer, Z. / David, D. et al. | British Library Conference Proceedings | 2007