This work reports on the feasibility of a design principle formulated using Li(1-x)KxBa(1-y)MgyF3double-hetero structure laser diode (LD) based on either KMgF3or LiBaF3substrate and operating at a wavelength in the deep ultraviolet region.
Formulation of design principle utilizing wide-gap fluoride hetero-structures for deep ultraviolet optical devices
2005-01-01
166072 byte
Conference paper
Electronic Resource
English
Prospects of Wide-Gap Fluoride Hetero-Structures for Deep Ultraviolet Optical Devices
British Library Conference Proceedings | 2005
|Ultraviolet Microchip Cerium Fluoride Lasers
British Library Conference Proceedings | 2005
|Ultraviolet microchip cerium fluoride lasers
IEEE | 2005
|