This work reports on the feasibility of a design principle formulated using Li(1-x)KxBa(1-y)MgyF3double-hetero structure laser diode (LD) based on either KMgF3or LiBaF3substrate and operating at a wavelength in the deep ultraviolet region.


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    Title :

    Formulation of design principle utilizing wide-gap fluoride hetero-structures for deep ultraviolet optical devices


    Contributors:
    Diwa, G. (author) / Quema, A. (author) / Ono, S. (author) / Sarukura, N. (author) / Kawazoe, Y. (author) / Fukuda, T. (author)


    Publication date :

    2005-01-01


    Size :

    166072 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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