Self-formed InGaAs quantum dot lasers with multi-stacked dot layer have been fabricated. Room temperature lasing at a lower-order subband have been observed with an increasing number of quantum dot layer and with decreasing cavity loss.


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    Title :

    Room temperature lasing at lower-order subband of self-formed InGaAs quantum dot lasers with multi-stacked dot layer


    Contributors:
    Shoji, H. (author) / Nakata, Y. (author) / Mukai, K. (author) / Sugiyama, Y. (author) / Sugawara, M. (author) / Yokoyama, N. (author) / Ishikawa, H. (author)


    Publication date :

    1996-01-01


    Size :

    181724 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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