We demonstrated high performance operation of 1.55 /spl mu/m wavelength GaInAsP-InP comprehensively strained MQW DFB lasers with completely etched through active layers that were fabricated by CH/sub 4//H/sub 2/-RIE and with OMVPE regrowth.


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    Title :

    GaInAsP/InP distributed feedback lasers with periodic wire-like active regions fabricated by CH/sub 4//H/sub 2/ reactive-ion-etching


    Contributors:
    Nunoya, N. (author) / Nakamura, M. (author) / Kojima, T. (author) / Tanaka, S. (author) / Yasumoto, H. (author) / Tamura, S. (author) / Arai, S. (author)


    Publication date :

    1999-01-01


    Size :

    168634 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English