We have demonstrated that Raman micro-probe has a better resolution than that of photoluminescence measurements in resolving GaAs-AlGaAs heterostructure intermixing. The technique is therefore suitable for characterising high resolution QWI processes.
Characterisation of the resolution of impurity free vacancy disordering in GaAs-AlGaAs using Raman and photoluminescence correlation measurements
1998-01-01
146513 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 1998
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