This study demonstrates the room-temperature pulsed operation of InGaAsN quantum dot laser diodes. Lasing action is exhibited at about 1078 nm from the excited states of the quantum dots at room temperature.
Room-temperature pulsed operation of InGaAsN quantum dot lasers
2004-01-01
111104 byte
Conference paper
Electronic Resource
English
Room-Temperature Pulsed Operation of InGaAsN Quantum Dot Lasers
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