This study demonstrates the room-temperature pulsed operation of InGaAsN quantum dot laser diodes. Lasing action is exhibited at about 1078 nm from the excited states of the quantum dots at room temperature.


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    Title :

    Room-temperature pulsed operation of InGaAsN quantum dot lasers


    Contributors:
    Gao, Q. (author) / Buda, M. (author) / Tan, H.H. (author) / Jagadish, C. (author)


    Publication date :

    2004-01-01


    Size :

    111104 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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