The gain saturation coefficient c in InGaAsIAIGaAs strained layer quantum well lasers is the oretically analyzed by taking into account the effect of strain on the intra-su&band relaxation time. It is demonstrated that the gain saturation coefficient increases with compressive strain in the active layer of quantum wells due to an increase of the intra-subband relaxation time.


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    Title :

    Theoretical analysis of gain saturation coefficients in InGaAs/AlGaAs strained layer quantum well lasers (SL-QWLs)


    Contributors:
    Seki, S. (author) / Sotirelis, P. (author) / Hess, K. (author)


    Publication date :

    1992-01-01


    Size :

    172886 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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