The traditional rectifier modeling method does not take into consideration the transient working process of the insulated gate bipolar transistor (IGBT). This paper first proposes a single-phase two-level rectifier modeling method based on improved Hefner model. On the premise of maintaining accuracy, complexity of the Hefner model and the tedious of the iterative process of the system equation are improved to make it more suitable for rectifier topology. Secondly, the improved Hefner model is applied to single-phase two-level rectifier to complete the overall model. Finally, Matlab/simulink is used as a platform to verify the correctness of the improved model and the rectifier model. The proposed model in this paper can reflect the complete working process of IGBT, which is more in line with the actual working conditions.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    A single-phase two-level rectifier modeling method based on improved Hefner model


    Contributors:
    Yang, Chunhua (author) / Wu, Yue (author) / Peng, Tao (author) / Chen, Zhiwen (author) / Yang, Chao (author)


    Publication date :

    2018-12-01


    Size :

    931409 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    The Hefner Standard Lamp

    Engineering Index Backfile | 1897


    Novel single-phase five-level VIENNA-type rectifier with model predictive current control

    Monteiro, Vítor Duarte Fernandes / Nogueiras Meléndez, Andrés A. / Afonso, João L. | BASE | 2017

    Free access



    Three-phase rectifier

    NIU LIYONG / WU SHUAI / PAN HAO | European Patent Office | 2020

    Free access