Most of works on passively Q-switched microchip lasers emitting at 1064 nm have been done with neodymium-doped YAG crystals as gain material and Cr/sup 4+/:YAG as saturable absorber. The bulk Cr/sup 4+/:GGG Czochralski grown passive Q-switches were also investigated. We have used a technique of liquid phase epitaxy (LPE) to grow Cr/sup 4+/:YAG, Cr/sup 4+/:GGG and Co/sup 2+/:YAG thin films of saturable absorber. X-ray diffraction analysis, optical transmission spectra measurements and passive Q-switching experiments were performed to characterize the obtained layers. Absorption saturation measurements of Cr/sup 4+/:YAG, Cr/sup 4+/:GGG and Co/sup 2+/:YAG layers were carried out at 1.06 /spl mu/m and 1.54 /spl mu/m, respectively.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Epitaxially grown 1.06 /spl mu/m and eye safe microchip lasers


    Contributors:
    Kopczynski, K. (author) / Sarnecki, J. (author) / Mlynczak, J. (author) / Mierczyk, Z. (author) / Skwarcz, J. (author)


    Publication date :

    2005-01-01


    Size :

    957292 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Epitaxially Grown 1.06 mum and Eye Safe Microchip Lasers

    Kopczynski, K. / Samecki, J. / Mlynczak, J. et al. | British Library Conference Proceedings | 2005


    Microchip Lasers

    IEEE | British Library Conference Proceedings | 1999


    Microchip lasers

    Sinclair, B.D. | IEEE | 1999


    Microchip lasers

    Zayhowski, J.J. | IEEE | 1997


    Miniature 1.06-m lasers for pumping EDFA [2893-536]

    Huo, Y. / You, N. / He, S. et al. | British Library Conference Proceedings | 1996